1EDN7126UXTSA1

1EDN7126UXTSA1 is a high-side TDI single-channel gate driver IC for driving Infineon CoolGaN™ Schottky Gate HEMTs and other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with GaN SG HEMTs, including truly differential Input, four driving strength options, active Miller clamp, and bootstrap voltage clamp. Potential applications includes single channel: synchronous rectifier, class-E resonant wireless power, half-bridge (2 x 1EDN71x6U): DC-DC converter, BLDC/PMSM motor drive, class-D audio amplifier, class-D resonant wireless power.

• PG-TSNP-7-11 package type, junction temperature range from -40 to 150°C
• Optimized for driving GaN SG HEMTs and Si MOSFETs
• Fully differential logic input circuitry to avoid false triggering in low-side/high-side operation
• High common-mode input voltage range (CMR) up to ±200V for high side operation
• High immunity to common-mode voltage transitions for robust operation during fast switching
• Compatible with 3.3V or 5V input logic
• Active bootstrap clamp to avoid bootstrap capacitor overcharging during dead-time
• Active miller clamp with 5A sink capability to avoid induced turn-on
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22