STPSC12065D

STPSC12065D is a 650V, 12A power Schottky silicon carbide diode in a 2 pin TO-220AC package. The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. It is used in DC/DC converter, high frequency inverter, snubber and boost PFC function.

• Forward voltage drop of 1.30V at IF = 12A
• Maximum operating junction temperature of 175°C
• No or negligible reverse recovery
• Switching behaviour independent of temperature
• High forward surge capability
• D²PAK HV creepage distance (anode to cathode) = 5.38mm min
• ECOPACK2 compliant
• Power efficient