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- 制造商ONSEMI制造商产品编号FDMD85100库存编号3003996技术数据表通道类型N通道漏源电压Vds N沟道100V漏源电压Vds P沟道-连续漏极电流 Id N沟道48A连续漏极电流 Id P沟道-漏源通态电阻N沟道9900µohm漏源导通电阻P沟道-晶体管封装类型QFN针脚数8引脚耗散功率N沟道50W耗散功率P沟道-工作温度最高值150°C产品范围PowerTrench Series合规-湿气敏感性等级MSL 1 -无限制
FDMD85100 is a dual N-channel PowerTrench® MOSFET. This device includes two N-channel MOSFETs in a dual power (5mm x 6mm) packages. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Typical applications include synchronous buck, primary switch of half/ full bridge converter for telecom, motor bridge, primary switch of half/full bridge converter for BLDC motor, MV POL, 48L synchronous buck switch and half/full bridge secondary synchronous rectification.
- Max rDS(on) = 9.9mohm at VGS=10V, Id=10.4A at Q1: N-channel
- Max rDS(on) = 16.4mohm at VGS=6V, Id = 8A at Q1: N-channel
- Max rDS(on) = 9.9mohm at VGS=10V, Id = 10.4A at Q2: N-channel
- Max rDS(on) = 16.4mohm at VGS = 6V, Id = 8A at Q2: N-channel
- Ideal for flexible layout in primary side of bridge topology
- Kelvin high side MOSFET drive pin out capability
- 通道类型
N通道
漏源电压Vds P沟道-
连续漏极电流 Id P沟道-
漏源导通电阻P沟道-
针脚数8引脚
耗散功率P沟道-
产品范围PowerTrench Series
湿气敏感性等级MSL 1 -无限制
漏源电压Vds N沟道100V
连续漏极电流 Id N沟道48A
漏源通态电阻N沟道9900µohm
晶体管封装类型QFN
耗散功率N沟道50W
工作温度最高值150°C
合规-
- 原产地:
进行最后一道重要生产流程所在的地区原产地:Philippines
进行最后一道重要生产流程所在的地区税则号:85413000US ECCN:EAR99EU ECCN:NLRRoHS 合规:Y-ExRoHS
RoHS 邻苯二甲酸盐合规:是RoHS
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重量(千克):.0005
