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FCB36N60NTM 的替代之选
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产品概述
The FCB36N60NTM is an N-channel SupreMOS high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFETs are suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 86nC)
- Low effective output capacitance (Coss.eff = 361pF)
- 100% avalanche tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
36A
晶体管封装类型
TO-263 (D2PAK)
Rds(on)测试电压
10V
功率耗散
312W
工作温度最高值
150°C
合规
-
漏源电压, Vds
600V
漏源接通状态电阻
0.081ohm
晶体管安装
表面安装
阈值栅源电压最大值
2V
针脚数
3引脚
产品范围
-
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法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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重量(千克):.00143
