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PMPB55XNEAX
功率场效应管, MOSFET, N通道, 30 V, 3.8 A, 0.055 ohm, DFN2020MD, 表面安装
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包装选项
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 5 | CNY6.790 | CNY33.95 |
切割卷带 & 复卷
| 数量 | 价钱 (含税) |
|---|---|
| 5+ | CNY6.790 (CNY7.6727) |
| 50+ | CNY4.220 (CNY4.7686) |
| 100+ | CNY2.720 (CNY3.0736) |
| 500+ | CNY2.080 (CNY2.3504) |
| 1500+ | CNY1.870 (CNY2.1131) |
品項附註
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产品概述
PMPB55XNEAX is a N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, switching circuits.
- Tin-plated 100% solderable side pads for optical solder inspection
- ElectroStatic discharge (ESD) protection > 1.5kV HBM
- Trench MOSFET technology
- AEC-Q101 qualified
- Drain-source breakdown voltage is 30V min at ID = 250µA; VGS = 0V; Tj = 25°C
- Drain leakage current is 1µA max at VDS = 30V; VGS = 0V; Tj = 25°C
- Drain-source on-state resistance is 55mohm typ at VGS = 4.5V; ID = 3.8A; Tj = 25°C
- Source-drain voltage is 0.8V typ at IS = 1.9A; VGS = 0V; Tj = 25°C
- Reverse recovery time is 12.6ns typ at IS = 2.5A; dIS/dt = -100A/µs; VGS = 0V; VDS = 10V; Tj = 25°C
- Recovered charge is 4nC typ at IS = 2.5A; dIS/dt = -100A/µs; VGS = 0V; VDS = 10V; Tj = 25°C
技术规格
通道类型
N通道
电流, Id 连续
3.8A
晶体管封装类型
DFN2020MD
Rds(on)测试电压
4.5V
功率耗散
1.95W
工作温度最高值
175°C
合规
AEC-Q101
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
漏源电压, Vds
30V
漏源接通状态电阻
0.055ohm
晶体管安装
表面安装
阈值栅源电压最大值
1V
针脚数
8引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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产品合规证书
重量（千克）：.000004