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PMPB55XNEAX
Power MOSFET, N Channel, 30 V, 3.8 A, 0.055 ohm, DFN2020MD, Surface Mount
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ManufacturerNEXPERIA
Manufacturer Part NoPMPB55XNEAX
Order Code
Re-Reel3287984RL
Cut Tape3287984
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 7 week(s)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY7.820 | CNY39.10 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY7.820 (CNY8.8366) |
| 50+ | CNY5.300 (CNY5.989) |
| 100+ | CNY4.100 (CNY4.633) |
| 500+ | CNY3.410 (CNY3.8533) |
| 1500+ | CNY2.600 (CNY2.938) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMPB55XNEAX
Order Code
Re-Reel3287984RL
Cut Tape3287984
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.8A
Drain Source On State Resistance0.055ohm
Transistor Case StyleDFN2020MD
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.95W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
PMPB55XNEAX is a N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, switching circuits.
- Tin-plated 100% solderable side pads for optical solder inspection
- ElectroStatic discharge (ESD) protection > 1.5kV HBM
- Trench MOSFET technology
- AEC-Q101 qualified
- Drain-source breakdown voltage is 30V min at ID = 250µA; VGS = 0V; Tj = 25°C
- Drain leakage current is 1µA max at VDS = 30V; VGS = 0V; Tj = 25°C
- Drain-source on-state resistance is 55mohm typ at VGS = 4.5V; ID = 3.8A; Tj = 25°C
- Source-drain voltage is 0.8V typ at IS = 1.9A; VGS = 0V; Tj = 25°C
- Reverse recovery time is 12.6ns typ at IS = 2.5A; dIS/dt = -100A/µs; VGS = 0V; VDS = 10V; Tj = 25°C
- Recovered charge is 4nC typ at IS = 2.5A; dIS/dt = -100A/µs; VGS = 0V; VDS = 10V; Tj = 25°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.8A
Transistor Case Style
DFN2020MD
Rds(on) Test Voltage
4.5V
Power Dissipation
1.95W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.055ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000004