BUK9K18-40E,115

BUK9K18-40E,115 is a dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified for the AEC Q101 standard for use in high-performance automotive applications. Typical applications include 12V automotive systems, motors, lamps and solenoid control, transmission control, ultra-high performance power switching.

• Dual MOSFET, Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175°C rating
• True logic level gate with VGS(th) rating of greater than 0.5V at 175°C
• Drain-source breakdown voltage is 36V min at ID = 250µA; VGS = 0 V; Tj= -55°C
• Drain-source on-state resistance is 17.1mohm typ at VGS = 5V; ID = 10A; Tj = 25°C
• Gate-drain charge is 3nC typical at ID = 10A; VDS = 32V; VGS = 10V;Tj = 25°C
• Rise time is 4.6ns typ at VDS = 32V, RL = 3.3ohm; VGS = 10V;RG(ext) = 5ohm; Tj = 25°C
• Fall time is 9.9ns typ at VDS = 32V, RL = 3.3ohm; VGS = 10V;RG(ext) = 5ohm; Tj = 25°C
• Source-drain voltage is 0.78V typ at IS = 10A; VGS = 0V; Tj = 25°C