CSB649A

The CSB649A is a high-voltage PNP silicon transistor designed for medium-current applications. It is well-suited for switching and amplification tasks where reliability and performance are essential. With a maximum collector-emitter voltage of 160V and a current rating of 1.5A, the CSB649A offers robust performance in a compact TO-126-3 package. The CSB649A transistor is a reliable and versatile PNP component ideal for high-voltage and medium-current applications. Its robust design, high voltage capability, and compact TO-126-3 package make it an excellent choice for a variety of electronic circuits and systems.

• Collector-Emitter Voltage (Vceo): 160V
• Collector-Base Voltage (Vcbo): 160V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 1.5A
• Base Current (Ib): Application-dependent
• Power Dissipation (Pd): Up to 2W (dependent on thermal management and mounting conditions)
• DC Current Gain (hFE): Typically ranges from 30 to 150 at Ic = 1A, Vce = 10V (varies with specific conditions)
• Package Type: TO-126-3
• Pin Configuration: 3 Pins (Collector, Base, Emitter)
• Mounting Style: Through-Hole
• Package Dimensions: Compact and efficient for integration into various electronic designs
• Junction Temperature (Tj): -55°C to +150°C
• Thermal Resistance, Junction to Ambient (RθJA): Approximately 100°C/W (varies with heat sinking and mounting conditions)