CSB649

The CSB649 is a high-voltage PNP silicon transistor designed for reliable performance in medium-current applications. It features a maximum collector-emitter voltage of 160V and a current rating of 1.5A, making it suitable for a variety of switching and amplification tasks. Encased in a compact TO-126-3 package, the CSB649 provides robust operation in demanding environments. The CSB649 transistor is a dependable PNP component ideal for high-voltage and medium-current applications. Its robust characteristics, high voltage rating, and compact package make it a valuable choice for engineers and designers working on diverse electronic systems.

• Collector-Emitter Voltage (Vceo): 160V
• Collector-Base Voltage (Vcbo): 160V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 1.5A
• Base Current (Ib): Dependent on application requirements
• Power Dissipation (Pd): Up to 2W, contingent upon heat sinking and mounting conditions
• DC Current Gain (hFE): Typically between 30 and 150 at Ic = 1A, Vce = 10V (values can vary based on specific conditions)
• Package Type: TO-126-3
• Pin Configuration: 3 Pins (Collector, Base, Emitter)
• Mounting Style: Through-Hole
• Package Dimensions: Compact and space-efficient, ideal for various circuit designs
• Junction Temperature (Tj): -55°C to +150°C
• Thermal Resistance, Junction to Ambient (RθJA): Approximately 100°C/W, depending on cooling and mounting conditions