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BD442
单晶体管 双极, PNP, 80 V, 4 A, 36 W, TO-225, 通孔
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制造商产品编号BD442
库存编号4343314
您的零件号
5,545 有货
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5545 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 5+ | CNY5.780 (CNY6.5314) |
| 10+ | CNY3.530 (CNY3.9889) |
| 100+ | CNY2.510 (CNY2.8363) |
| 500+ | CNY1.790 (CNY2.0227) |
| 1000+ | CNY1.590 (CNY1.7967) |
| 5000+ | CNY1.360 (CNY1.5368) |
包装规格：每个
最低: 5
多件: 5
CNY28.90 (CNY32.66 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
The BD442 is a high-performance PNP silicon power transistor designed for use in high-current and high-voltage applications. Its robust characteristics make it well-suited for power amplifiers, motor drivers, and switching regulators, offering reliable performance in demanding electronic circuits. The BD442 transistor is a versatile and durable component, making it a suitable choice for a wide range of high-power applications. Its reliable performance and robust design make it a valuable addition to any electronic system.
- Collector-Emitter Voltage (Vceo): 80V
- Collector-Base Voltage (Vcbo): 80V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 8A
- Base Current (Ib): 1.5A
- Power Dissipation (Pd): 60W
- DC Current Gain (hFE): 30-150 at Ic = 4A, Vce = 5V
- Package Type: TO-220
- Pin Configuration: 3 Pins (Collector, Base, Emitter)
- Mounting Style: Through-Hole
- Junction Temperature (Tj): -65°C to +150°C
- Thermal Resistance, Junction to Case (RθJC): 2.08°C/W
技术规格
晶体管极性
PNP
连续集电极电流
4A
晶体管封装类型
TO-225
针脚数
3引脚
直流电流增益, Hfe 最小值
40hFE
产品范围
Multicomp Pro Bipolar Transistor PNP
湿气敏感性等级
0
最大集电极发射电压
80V
功率耗散
36W
晶体管安装
通孔
过渡频率
3MHz
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
技术文档 (1)
BD442 的替代之选
找到 1 件产品
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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产品合规证书
重量（千克）：.00065