BD442
Bipolar (BJT) Single Transistor, PNP, 80 V, 4 A, 36 W, TO-225, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY5.780 (CNY6.5314) |
| 10+ | CNY3.530 (CNY3.9889) |
| 100+ | CNY2.510 (CNY2.8363) |
| 500+ | CNY1.790 (CNY2.0227) |
| 1000+ | CNY1.590 (CNY1.7967) |
| 5000+ | CNY1.360 (CNY1.5368) |
Product Information
Product Overview
The BD442 is a high-performance PNP silicon power transistor designed for use in high-current and high-voltage applications. Its robust characteristics make it well-suited for power amplifiers, motor drivers, and switching regulators, offering reliable performance in demanding electronic circuits. The BD442 transistor is a versatile and durable component, making it a suitable choice for a wide range of high-power applications. Its reliable performance and robust design make it a valuable addition to any electronic system.
- Collector-Emitter Voltage (Vceo): 80V
- Collector-Base Voltage (Vcbo): 80V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 8A
- Base Current (Ib): 1.5A
- Power Dissipation (Pd): 60W
- DC Current Gain (hFE): 30-150 at Ic = 4A, Vce = 5V
- Package Type: TO-220
- Pin Configuration: 3 Pins (Collector, Base, Emitter)
- Mounting Style: Through-Hole
- Junction Temperature (Tj): -65°C to +150°C
- Thermal Resistance, Junction to Case (RθJC): 2.08°C/W
Applications
Audio, Power Supplies, DC/DC Converters, Motor Drive & Control, Signal Processing
Technical Specifications
PNP
4A
TO-225
3Pins
40hFE
Multicomp Pro Bipolar Transistor PNP
-
80V
36W
Through Hole
3MHz
150°C
-
No SVHC (25-Jun-2025)
Technical Docs (1)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate