S70GL02GS12FHIV20

S70GL02GS12FHIV20 is a 2-Gigabit MirrorBit® flash memory device. It is fabricated using 65nm MirrorBit Eclipse process technology. This device offers a fast page access time of 25ns with a corresponding random access time of 120ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single-byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance, and lower power consumption.

• CMOS 3.0 Volt Core with Versatile I/O™
• 65nm MirrorBit Eclipse™ process technology
• Single supply (VCC) for read / program / erase (2.7V to 3.6V)
• Wide I/O voltage (VIO): 1.65V to VCC, x16 data bus
• 16-word/32-byte page read buffer, 512-byte programming buffer
• Suspend and resume commands for program and erase operations
• Status register, data polling, and ready/busy pin methods to determine the device status
• Separate 1024-bye one time program (OTP) array with two lockable regions
• 100,000 erase cycles per sector typical, 20-year data retention typical
• Industrial temperature range from -40°C to +85°C, 64 pin FBGA package