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| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 1 | CNY9.570 | CNY9.57 |
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY9.570 (CNY10.8141) |
| 10+ | CNY6.260 (CNY7.0738) |
| 50+ | CNY5.900 (CNY6.667) |
| 100+ | CNY5.540 (CNY6.2602) |
| 250+ | CNY5.200 (CNY5.876) |
| 500+ | CNY5.040 (CNY5.6952) |
| 1000+ | CNY4.940 (CNY5.5822) |
| 2500+ | CNY4.910 (CNY5.5483) |
产品信息
产品概述
IRS21531DSTRPBF is a self oscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable rugged monolithic construction. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Noise immunity is achieved with low di/dt peak of the gate drivers.
- Integrated 600V half-bridge gate driver
- CT, RT programmable oscillator
- 15.4V Zener clamp on VCC, +/- 50V/ns dV/dt immunity
- Micropower startup, non-latched shutdown on CT pin (1/6th VCC)
- Internal bootstrap FET, excellent latch immunity on all inputs and outputs
- ESD protection on all pins, internal deadtime
- Quiescent VBS supply current is 60µA typical
- Oscillator frequency is 93KHz typical at RT=7.15Kohm
- 8-lead SOIC package
- Junction temperature range from -40 to 125°C
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
2放大器
半桥
8引脚
表面安装
180mA
10.1V
-40°C
680ns
-
MSL 2 - 1年
非隔离
MOSFET
SOIC
-
260mA
16.8V
125°C
150ns
-
No SVHC (25-Jun-2025)
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书
