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IRFH7085TRPBF
功率场效应管, MOSFET, N通道, 60 V, 100 A, 3200 µohm, QFN, 表面安装
图片仅用于图解说明，详见产品说明。
可订购
制造商标准交货时间：56 周
有货时请通知我
包装选项
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 1 | CNY21.790 | CNY21.79 |
切割卷带 & 复卷
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY21.790 (CNY24.6227) |
| 10+ | CNY14.180 (CNY16.0234) |
| 100+ | CNY9.690 (CNY10.9497) |
| 500+ | CNY7.930 (CNY8.9609) |
| 1000+ | CNY6.820 (CNY7.7066) |
| 5000+ | CNY6.690 (CNY7.5597) |
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
Single N-channel StrongIRFET™ power MOSFET. The device is ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters and DC-DC converters, half-bridge and full-bridge topologies, synchronous rectifier and resonant mode power supplies.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Product qualification according to JEDEC standard
- Softer body-diode compared to previous silicon generation
- Standard pinout allows for drop in replacement
- Industry standard qualification level
- High performance in low frequency applications
- Increased power density
- Provides designers flexibility in selecting the most optimal device for their application
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
100A
晶体管封装类型
QFN
Rds(on)测试电压
10V
功率耗散
-
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
漏源电压, Vds
60V
漏源接通状态电阻
3200µohm
晶体管安装
表面安装
阈值栅源电压最大值
3.7V
针脚数
8引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下载产品合规证书
产品合规证书
重量（千克）：.00013