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IRFH7085TRPBF
Power MOSFET, N Channel, 60 V, 100 A, 3200 µohm, QFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFH7085TRPBFCopy
Manufacturer Standard Lead Time56 weeks
Order Code
Re-Reel2456714RL
Cut Tape2456714
Also Known AsSP001560390
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 56 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY21.790 | CNY21.79 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY21.790 (CNY24.6227) |
| 10+ | CNY14.180 (CNY16.0234) |
| 100+ | CNY9.690 (CNY10.9497) |
| 500+ | CNY7.930 (CNY8.9609) |
| 1000+ | CNY6.820 (CNY7.7066) |
| 5000+ | CNY6.690 (CNY7.5597) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFH7085TRPBFCopy
Manufacturer Standard Lead Time56 weeks
Order Code
Re-Reel2456714RL
Cut Tape2456714
Also Known AsSP001560390
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id100A
Drain Source On State Resistance3200µohm
Transistor Case StyleQFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation-
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
Single N-channel StrongIRFET™ power MOSFET. The device is ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters and DC-DC converters, half-bridge and full-bridge topologies, synchronous rectifier and resonant mode power supplies.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Product qualification according to JEDEC standard
- Softer body-diode compared to previous silicon generation
- Standard pinout allows for drop in replacement
- Industry standard qualification level
- High performance in low frequency applications
- Increased power density
- Provides designers flexibility in selecting the most optimal device for their application
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
QFN
Rds(on) Test Voltage
10V
Power Dissipation
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
3200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.7V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00013