IRF530NSTRLPBF
功率场效应管, MOSFET, N通道, 100 V, 17 A, 0.09 ohm, TO-263 (D2PAK), 表面安装
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| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 1 | CNY23.770 | CNY23.77 |
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY23.770 (CNY26.8601) |
| 10+ | CNY15.390 (CNY17.3907) |
| 100+ | CNY10.550 (CNY11.9215) |
| 500+ | CNY7.430 (CNY8.3959) |
| 1000+ | CNY7.290 (CNY8.2377) |
| 5000+ | CNY7.140 (CNY8.0682) |
产品概述
The IRF530NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
技术规格
N通道
17A
TO-263 (D2PAK)
10V
70W
175°C
-
No SVHC (25-Jun-2025)
100V
0.09ohm
表面安装
4V
3引脚
-
MSL 1 -无限制
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法律与环境
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
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