IRF530NSTRLPBF
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY23.950 | CNY23.95 |
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY23.950 (CNY27.0635) |
| 10+ | CNY15.220 (CNY17.1986) |
| 100+ | CNY10.290 (CNY11.6277) |
| 500+ | CNY6.900 (CNY7.797) |
| 1000+ | CNY6.510 (CNY7.3563) |
| 5000+ | CNY6.000 (CNY6.780) |
Product Information
Product Overview
The IRF530NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Applications
Power Management
Technical Specifications
N Channel
17A
TO-263 (D2PAK)
10V
70W
175°C
-
No SVHC (25-Jun-2025)
100V
0.09ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate