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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY25.170 (CNY28.4421) |
| 10+ | CNY18.910 (CNY21.3683) |
| 25+ | CNY17.650 (CNY19.9445) |
| 50+ | CNY16.390 (CNY18.5207) |
| 100+ | CNY15.610 (CNY17.6393) |
| 250+ | CNY14.780 (CNY16.7014) |
| 500+ | CNY14.300 (CNY16.159) |
| 1000+ | CNY13.890 (CNY15.6957) |
产品概述
The IR2121PBF is a high speed power MOSFET and IGBT Driver with over-current limiting protection circuitry. Latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs and down to 2.5V logic. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle-by-cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting condition and latched shutdown. The output can be used to drive a N-channel power MOSFET or IGBT in the low-side configuration.
- Under-voltage lockout
- Current detection and limiting loop to limit driven power transistor current
- Error lead indicates fault conditions and programs shutdown time
- Output in phase with input
- 2.5, 5 and 15V Input logic compatible
技术规格
1放大器
低压侧
8引脚
通孔安装
1A
7V
-40°C
150ns
-
-
-
IGBT, MOSFET
DIP
非反向
2A
23V
125°C
200ns
-
No SVHC (25-Jun-2025)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书
