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1,656 有货
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1,656 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY33.890 (CNY38.2957) |
| 10+ | CNY25.740 (CNY29.0862) |
| 25+ | CNY23.700 (CNY26.781) |
| 50+ | CNY22.560 (CNY25.4928) |
| 100+ | CNY21.410 (CNY24.1933) |
| 250+ | CNY20.340 (CNY22.9842) |
| 500+ | CNY19.730 (CNY22.2949) |
| 1000+ | CNY18.060 (CNY20.4078) |
包装规格:每个
最低: 1
多件: 1
CNY33.89 (CNY38.30 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
The IR2112PBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
技术规格
通道数
2放大器
驱动配置
高压侧和低压侧
针脚数
14引脚
芯片安装
通孔安装
拉电流
250mA
电源电压最小值
10V
工作温度最小值
-40°C
输入延迟
125ns
产品范围
-
湿气敏感性等级
-
栅极驱动器类型
-
电源开关类型
IGBT, MOSFET
IC 外壳 / 封装
DIP
输入类型
非反向
灌电流
500mA
电源电压最大值
20V
工作温度最高值
125°C
输出延迟
105ns
合规
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
相关产品
找到 3 件产品
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
税则号:85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下载产品合规证书
产品合规证书
重量(千克):.000907
