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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY42.280 (CNY47.7764) |
| 10+ | CNY32.210 (CNY36.3973) |
| 25+ | CNY29.700 (CNY33.561) |
| 50+ | CNY28.320 (CNY32.0016) |
| 100+ | CNY26.930 (CNY30.4309) |
| 250+ | CNY25.610 (CNY28.9393) |
| 500+ | CNY24.820 (CNY28.0466) |
| 1000+ | CNY24.160 (CNY27.3008) |
产品信息
产品概述
The IR2010PBF is a high power high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200V. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3V Logic compatible
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Shut down input turns OFF both channels
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
- 通道数
2放大器
驱动配置高压侧和低压侧
针脚数14引脚
芯片安装通孔安装
拉电流3A
电源电压最小值10V
工作温度最小值-40°C
输入延迟95ns
产品范围-
湿气敏感性等级-
栅极驱动器类型-
电源开关类型IGBT, MOSFET
IC 外壳 / 封装DIP
输入类型非反向
灌电流3A
电源电压最大值20V
工作温度最高值125°C
输出延迟65ns
合规-
SVHC(高度关注物质)No SVHC (25-Jun-2025)
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法律与环境
- 原产地:
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区税则号:85423990US ECCN:EAR99EU ECCN:NLRRoHS 合规:是RoHS
RoHS 邻苯二甲酸盐合规:是RoHS
SVHC:No SVHC (25-Jun-2025)下载产品合规证书产品合规证书
重量(千克):.027216
