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IPP65R190C7FKSA1
功率场效应管, MOSFET, N通道, 650 V, 13 A, 0.168 ohm, TO-220, 通孔
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460 有货
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460 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY25.060 (CNY28.3178) |
| 10+ | CNY16.300 (CNY18.419) |
| 100+ | CNY12.500 (CNY14.125) |
| 500+ | CNY10.450 (CNY11.8085) |
| 1000+ | CNY9.070 (CNY10.2491) |
包装规格：每个
最低: 1
多件: 1
CNY25.06 (CNY28.32 含税)
品項附註
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IPP65R190C7FKSA1 的替代之选
找到 1 件产品
产品概述
The IPP65R190C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS™ quality
技术规格
通道类型
N通道
电流, Id 连续
13A
晶体管封装类型
TO-220
Rds(on)测试电压
10V
功率耗散
72W
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
漏源电压, Vds
650V
漏源接通状态电阻
0.168ohm
晶体管安装
通孔
阈值栅源电压最大值
3.5V
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
相关产品
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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重量（千克）：.000006