IPP65R190C7FKSA1
Power MOSFET, N Channel, 650 V, 13 A, 0.168 ohm, TO-220, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY25.060 (CNY28.3178) |
| 10+ | CNY16.300 (CNY18.419) |
| 100+ | CNY12.500 (CNY14.125) |
| 500+ | CNY10.450 (CNY11.8085) |
| 1000+ | CNY9.070 (CNY10.2491) |
Product Information
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Product Overview
The IPP65R190C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS™ quality
Applications
Industrial, Power Management, Alternative Energy, Communications & Networking
Technical Specifications
N Channel
13A
TO-220
10V
72W
150°C
-
No SVHC (21-Jan-2025)
650V
0.168ohm
Through Hole
3.5V
3Pins
-
-
Associated Products
6 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate