AUIRFR540ZTRL

AUIRFR540ZTRL is a HEXFET® power MOSFET. This is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. This feature combines to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Application includes automatic voltage regulator (AVR), solenoid injection, body control, low power automotive applications.

• 100V minimum drain-to-source breakdown voltage (TJ = 25°C, VGS = 0V, ID = 250µA)
• 0.092V/°C typical breakdown voltage temp. coefficient (TJ = 25°C, static at TJ = 25°C, ID = 1mA)
• 22.5mohm typical static drain-to-source on-resistance (TJ = 25°C, VGS = 10V, ID = 21A)
• 2.0 to 4.0V gate threshold voltage range (VDS = VGS, ID = 50µA, TJ = 25°C)
• 28S minimum forward trans conductance (VDS = 25V, ID = 21A, TJ = 25°C)
• 20µA maximum drain-to-source leakage current (TJ = 25°C, VDS = 100V, VGS = 0V)
• 39nC typical total gate charge (D = 21A, TJ = 25°C)
• 42ns typical rise time (D = 21A, TJ = 25°C)
• 190pF typical effective output capacitance (VGS = 0V, VDS = 0V to 80V)
• TO-252AA package, operating junction and storage temperature range from -55 to + 175°C