
需要更多?
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 1 | CNY10.980 | CNY10.98 |
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY10.980 (CNY12.4074) |
| 10+ | CNY7.520 (CNY8.4976) |
| 50+ | CNY7.140 (CNY8.0682) |
| 100+ | CNY6.760 (CNY7.6388) |
| 250+ | CNY6.390 (CNY7.2207) |
| 500+ | CNY6.160 (CNY6.9608) |
| 1000+ | CNY6.080 (CNY6.8704) |
| 2500+ | CNY5.990 (CNY6.7687) |
产品信息
产品概述
1EDB6275FXUMA1 is an EiceDRIVER™ single-channel isolated gate driver IC. It is designed to drive Si, SiC, and GaN power switches. It provides isolation by means of on-chip coreless transformer (CT) technology. With tight timing specifications, it is designed for fast-switching medium-to-high power systems. Excellent common-mode rejection, low part-to-part skew, fast signal propagation, and small package size make the device a superior alternative to high-side driving solutions using optocouplers or pulse transformers. It is used in applications such as server and telecom switch-mode power supplies (SMPS), EV off-board chargers, low-voltage drives and power tools, solar micro inverters, solar optimizers, industrial power supplies (SMPS, residential UPS).
- Single-channel isolated gate driver, UL 1577 with VISO = 3000VRMS certified
- Separate low impedance source and sink outputs
- Fast clamping of parasitics-induced output overshoots under UVLO conditions
- Fast start-up times and fast recovery after supply glitches
- High common-mode transient immunity (CMTI <gt/> 300V/ns)
- Fully qualified according JEDEC for industrial applications
- 5A peak source current, 9A sink current, 12.2V/11.5V (UVLO ON/OFF)
- IVDDI quiescent current is 1mA maximum at (VDDI = 3.3V, VDDO = 12V)
- Rise time is 8.3ns typical at (VDDO = 18V, CLOAD = 1.8nF)
- Junction temperature range from -40°C to 150°C, DSO-8 package
技术规格
1放大器
高压侧
8引脚
表面安装
5.4A
3V
-40°C
45ns
-
No SVHC (25-Jun-2025)
隔离式
MOSFET, SiC MOSFET, GaN功率器件
SOIC
反相, 非反相
9.8A
15V
150°C
45ns
-
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书
