1ED21471S65FXUMA1

1ED21471S65FXUMA1 is a 1ED21x7x family 650V high-side gate driver with overcurrent protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD). The over-current protection and under-voltage lockout circuit detects over-current / under-voltage in the driven power transistor and terminates the gate drive voltage. An open-drain FAULT signal is provided to indicate that an over-current shutdown has occurred. Potential applications include motor drives, general purpose inverters, Forklift, and light electric vehicles.

• Infineon thin-film-SOI-technology
• Integrated ultra-fast, low RDS(ON) bootstrap diode
• Negative VS transient immunity of 100V
• Detection of overcurrent and under voltage supply
• Multi-function RCIN/fault/enable (RFE) with programmable fault clear time
• High-side floating well supply offset voltage is 650V max at TA =25°C
• VCC quiescent supply current is 400µA max at (VCC– COM) = (VB – VS) = 15V and TA = 25°C
• IGBT / SiC MOSFET target transistor
• PG-DSO-8 package
• Ambient temperature range from -40 to 125°C