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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY12.190 (CNY13.7747) |
| 10+ | CNY8.090 (CNY9.1417) |
| 50+ | CNY7.620 (CNY8.6106) |
| 100+ | CNY7.150 (CNY8.0795) |
| 250+ | CNY6.710 (CNY7.5823) |
| 500+ | CNY6.380 (CNY7.2094) |
| 1000+ | CNY6.050 (CNY6.8365) |
| 2500+ | CNY5.710 (CNY6.4523) |
Product Information
Product Overview
1ED21471S65FXUMA1 is a 1ED21x7x family 650V high-side gate driver with overcurrent protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD). The over-current protection and under-voltage lockout circuit detects over-current / under-voltage in the driven power transistor and terminates the gate drive voltage. An open-drain FAULT signal is provided to indicate that an over-current shutdown has occurred. Potential applications include motor drives, general purpose inverters, Forklift, and light electric vehicles.
- Infineon thin-film-SOI-technology
- Integrated ultra-fast, low RDS(ON) bootstrap diode
- Negative VS transient immunity of 100V
- Detection of overcurrent and under voltage supply
- Multi-function RCIN/fault/enable (RFE) with programmable fault clear time
- High-side floating well supply offset voltage is 650V max at TA =25°C
- VCC quiescent supply current is 400µA max at (VCC– COM) = (VB – VS) = 15V and TA = 25°C
- IGBT / SiC MOSFET target transistor
- PG-DSO-8 package
- Ambient temperature range from -40 to 125°C
Technical Specifications
1Channels
High Side
8Pins
Surface Mount
4A
9.2V
-40°C
55ns
-
MSL 2 - 1 year
Non-Isolated
IGBT, SiC MOSFET
SOIC
Logic
-4A
22V
125°C
55ns
-
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate
