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NTHL045N065SC1

Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 66 A, 650 V, 0.032 ohm, TO-247

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ONSEMI NTHL045N065SC1 Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 66 A, 650 V, 0.032 ohm, TO-247
ManufacturerONSEMI
Manufacturer Part NoNTHL045N065SC1Copy
Manufacturer Standard Lead Time50 weeks
Order Code3929792
Product RangeEliteSiC Series
Your Part Number
280 In Stock

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5+CNY82.660 (CNY93.4058)
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Product Information

ManufacturerONSEMI
Manufacturer Part NoNTHL045N065SC1Copy
Manufacturer Standard Lead Time50 weeks
Order Code3929792
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id66A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.032ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation291W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (25-Jun-2025)

Technical Specifications

MOSFET Module Configuration

Single

Continuous Drain Current Id

66A

Drain Source On State Resistance

0.032ohm

No. of Pins

3Pins

Gate Source Threshold Voltage Max

2.8V

Operating Temperature Max

175°C

SVHC

Lead (25-Jun-2025)

Channel Type

N Channel

Drain Source Voltage Vds

650V

Transistor Case Style

TO-247

Rds(on) Test Voltage

18V

Power Dissipation

291W

Product Range

EliteSiC Series

Associated Products

2 Products Found

Legislation and Environmental

Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:
Vietnam
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes

RoHS

SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate

Product Compliance Certificate

Weight (kg):.009072