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DMP4047LFDE-7
功率场效应管, MOSFET, P通道, 40 V, 3.3 A, 0.033 ohm, UDFN2020, 表面安装
1,705 有货
12,000 您现在可以预订货品了
1,705 件可于 5-6 个工作日内送达(英国 库存)
包装选项
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 5 | CNY4.900 | CNY24.50 |
切割卷带 & 复卷
| 数量 | 价钱 (含税) |
|---|---|
| 5+ | CNY4.900 (CNY5.537) |
| 50+ | CNY4.310 (CNY4.8703) |
| 100+ | CNY3.820 (CNY4.3166) |
| 500+ | CNY3.750 (CNY4.2375) |
| 1500+ | CNY3.670 (CNY4.1471) |
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
DMP4047LFDE-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include general-purpose interfacing switches, load switching and battery-management applications.
- 0.6mm profile – ideal for low profile applications, PCB footprint of 4mm²
- Low gate threshold voltage, low on-resistance
- Drain-source voltage is -40V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is -3.3A at TA = +25°C, steady state, VGS = -10V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is -40A at TA = +25°C
- Total power dissipation is 0.7W at TA = +25°C
- Static drain-source on-resistance is 33mohm max at VGS = -10V, ID = -4.4A, TA = +25°C
- U-DFN2020-6 (type E) package
- Operating and storage temperature range from -55 to +150°C
技术规格
通道类型
P通道
电流, Id 连续
3.3A
晶体管封装类型
UDFN2020
Rds(on)测试电压
10V
功率耗散
700mW
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (04-Feb-2026)
漏源电压, Vds
40V
漏源接通状态电阻
0.033ohm
晶体管安装
表面安装
阈值栅源电压最大值
2.2V
针脚数
6引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
相关产品
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (04-Feb-2026)
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重量（千克）：.005