VS-C10ET07T-M3

VS-C10ET07T-M3 is a 650V, 10A power SiC merged PIN schottky diode. This wide band gap SiC based 650V Schottky diode, designed for high performance and ruggedness. It is an optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behaviour. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters.

• Majority carrier diode using schottky technology on SiC wide band gap material
• Positive VF temperature coefficient for easy paralleling
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behaviour
• 175°C maximum operating junction temperature
• MPS structure for high ruggedness to forward current surge events
• Meets JESD 201 class 1A whisker test
• Solder bath temperature 275°C maximum, 10s per JESD 22-B106

注释

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