IRLD120PBF

The IRLD120PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.

• Dynamic dV/dt rating
• For automatic insertion
• Repetitive avalanche rated
• End stackable
• Logic-level gate drive
• RDS (ON) Specified at VGS = 4 and 5V
• -55 to 175°C Operating temperature range

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.