IRFZ44RPBF
功率场效应管, MOSFET, N通道, 60 V, 50 A, 0.028 ohm, TO-220AB, 通孔
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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY20.340 (CNY22.9842) |
| 10+ | CNY11.590 (CNY13.0967) |
| 100+ | CNY10.590 (CNY11.9667) |
| 500+ | CNY9.990 (CNY11.2887) |
| 1000+ | CNY9.800 (CNY11.074) |
| 5000+ | CNY9.600 (CNY10.848) |
产品概述
The IRFZ44RPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. This Power device utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit, combined with the ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- -55 to 175°C Operating temperature range
- Fully avalanche rated
技术规格
N通道
50A
TO-220AB
10V
150W
175°C
-
Lead (04-Feb-2026)
60V
0.028ohm
通孔
4V
3引脚
-
-
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法律与环境
进行最后一道重要生产流程所在的地区原产地：Israel
进行最后一道重要生产流程所在的地区
RoHS
RoHS
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