DG4157EDN-T1-GE4

DG4157EDN-T1-GE4 is a high-performance single-pole, double-throw (SPDT) analogue switch designed for 1.65V to 5.5V operation with a single power rail. It is fabricated with high-density CMOS technology, this device achieves a low on resistance of 0.86 ohm at a 4.5V power supply, low power consumption, and fast switching speeds. It can handle both analogue and digital signals and permits signal with amplitudes of upto V+ to be transmitted in either direction. Its control logic inputs can go over V+ upto 5.5V. The control logic input high threshold is guaranteed as low as 1.8V over the power supply range upto 5.5V. It features breaks before making switching performance. Its -3dB bandwidth is typically 152MHz. A powered-off protection circuit is built into the switch to prevent an abnormal current flow from the COM pin to V+ during the power-down condition. It is used in applications such as smartphones and tablets, consumer and computing, portable instrumentation, and medical equipment.

• Isolation in powered-off mode, guaranteed 1.8V logic high
• Control logic inputs can go over V+, low total harmonic distortion
• Break before make switching, latch-up performance exceeds 300mA per JESD 78
• 7000V human body model (JS-001), 1000V charge device model (JS-002)
• On resistance flatness is 0.2 ohm typical at (V+ = 2.7V, B0 or B1 = 0.75V, 1.5V, IO = 100mA)
• Total harmonic distortion is 0.0055% typ at (RL= 600 ohm, VSIGNAL = 0.5V, f = 20Hz to 20KHz)
• Quiescent supply current is 1μA maximum at (V+ = 5.5V, VS = 0V, 5.5V)
• Off isolation is -64dB typical at (RL= 50 ohm, f = 1MHz)
• Turn-on time is 27ns typical at (V+ = 2.7V, B0 or B1 = 1.5V, RL = 50 ohm, CL = 35pF)
• Operating temperature range from -40°C to +85°C, μDFN-6L package