DG309BDY-T1-E3

DG309BDY-T1-E3 is a normally closed, improved quad CMOS analogue switch which is a highly improved version of the industry standard. This device is fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. This quad single-pole single-throw switch is designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. This device features true bi-directional performance in the on condition and will block signals to the supply levels in the off condition.

• CMOS compatible logic, ±22V supply voltage rating
• Drain-source on-resistance is 45ohm typ (room, VD = ±10V, IS = 1mA, -40 to 85°C)
• Drain on leakage current is ±0.02nA typ (room, VS = VD = ±14V, room, -40 to 85°C)
• RDS(on) match is 2% (room, VD = ±10V, IS = 1mA, -40 to 85°C)
• Power supply range for continuous operation range from ±4 to ±22V (-40 to 85°C)
• Charge injection is 1pC typ (CL = 1000pF, Vg = 0V, Rg = 0 ohm, room, -40 to 85°C)
• Source-off capacitance is 5pF typ (room, VS = 0V, f = 1MHz, -40 to 85°C)
• Off-isolation is 90dB typ (room, CL = 15pF, RL = 50 ohm, VS = 1VRMS, f = 100KHz, -40 to 85°C)
• Drain-off capacitance is 5pF typ (VS = 0V, f = 1MHz, -40 to 85°C)
• 16-pin narrow SOIC package, temperature range from -40°C to 85°C