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1383 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY19.200 (CNY21.696) |
| 10+ | CNY13.830 (CNY15.6279) |
| 25+ | CNY12.930 (CNY14.6109) |
| 50+ | CNY12.130 (CNY13.7069) |
| 100+ | CNY11.500 (CNY12.995) |
| 500+ | CNY10.900 (CNY12.317) |
包装规格:单件(切割供应)
最低: 1
多件: 1
CNY19.20 (CNY21.70 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
TLP5814H(TP,E(O is a highly integrated gate driver photocoupler (GaAℓAs infrared LED & photo IC). The TLP5814H consists of an infrared LED and an integrated high-gain, high-speed photodetector. Suitable for Photovoltaic (PV) inverters, industrial inverters, SiC-MOSFET gate drivers, IGBT gate drivers applications.
- Supply voltage range from 13 to 23V
- Supply current is 5mA (max)
- Peak miller clamp sinking current: 6.8A (max)
- Output peak current: +6.8A/-4.8A (max)
- Threshold input current is 3mA (max)
- Propagation delay time is 150ns (max)
- Common-mode transient immunity is ±70kV/µs (min)
- Isolation voltage is 5000Vrms (min)
- 8-pin SO8L package
- Operating temperature range from -40 to 125°C
技术规格
通道数
1通道
针脚数
8引脚
产品范围
-
光电耦合器封装类型
SOIC
隔离电压
5kVrms
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Japan
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Japan
进行最后一道重要生产流程所在的地区
税则号:85423911
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:稍后通知
SVHC:No SVHC (21-Jan-2025)
下载产品合规证书
产品合规证书
重量(千克):.000203

