STP40N60M2

STP40N60M2 is a N-channel 600V, 0.078ohm typ., 34A MDmesh M2 Power MOSFET. This device is N-channel Power MOSFET developed using MDmesh™ M2 technology. Due to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Application includes switching applications, LLC converters, resonant converters.

• Extremely low gate charge, excellent output capacitance (Cos) profile
• 100% avalanche tested, zener-protected
• 650V VDS at Tjmax, 0.088ohm maximum static drain-source on-resistance (VGS = 10V, ID = 17A)
• 34A typical source-drain current (TC = 25°C)
• 600V minimum drain-source breakdown voltage (VGS = 0, ID = 1mA)
• 3V typical gate threshold voltage (VDS = VGS, ID = 250µA)
• 10nC typical gate-source charge (VDD = 480V, ID = 34A, VGS = 10V)
• 13.5ns typical rise time (VDD = 300V, ID = 34A, RG = 4.7ohm, VGS = 10V)
• 1.6V maximum forward on voltage (ISD = 34A, VGS = 0)
• TO-220 package, operating junction temperature range from -55 to 150°C

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.