STGAP2SICSACTR

STGAP2SICSACTR is a galvanically isolated single gate driver for SiC MOSFETs which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications. This device has a single output pin and Miller CLAMP function that prevents gate spikes during fast commutations in half-bridge topologies. This configuration provides high flexibility and bill of material reduction for external components. Applications include motor driver for home appliances, factory automation, industrial drives and fans, 600/1200V inverters, battery chargers, induction heating, welding, UPS, power supply units, DC-DC converters, power factor correction.

• AEC-Q100 qualified, high voltage rail up to 1200V
• 100V/ns common mode transient immunity (CMTI)
• Rail-to-rail outputs, 4A Miller CLAMP dedicated pin, UVLO function
• 3.3V, 5V TTL/CMOS inputs with hysteresis, gate driving voltage up to 26V
• Temperature shut-down protection, standby function
• 6kV galvanic isolation, UL 1577 recognized
• Pulse width distortion is 20ns maximum (TJ = -40 to 125°C)
• Input to output propagation delay ON is 45ns typical at (TJ=25°C)
• VDD quiescent supply current is 1mA typical (TJ = -40 to 125°C)
• Operating junction temperature range from -40 to 125°C, wide body SO-8W package