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| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 1 | CNY45.650 | CNY45.65 |
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY45.650 (CNY51.5845) |
| 10+ | CNY34.960 (CNY39.5048) |
| 25+ | CNY32.340 (CNY36.5442) |
| 50+ | CNY30.860 (CNY34.8718) |
| 100+ | CNY29.380 (CNY33.1994) |
| 250+ | CNY28.750 (CNY32.4875) |
| 500+ | CNY28.150 (CNY31.8095) |
产品概述
MASTERGAN4LTR is a 600V half-bridge enhancement-mode GaN HEMT with a high-voltage driver. It is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in a half‑bridge configuration. It features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with analogue controllers, microcontrollers, and DSP units. Typical applications are high-frequency resonant converters including LLC, LCC and resonant flyback, active clamp flybacks, switch-mode power supplies, chargers and adapters, PFC, high-voltage DC-DC and DC-AC converters.
- Reverse current capability, zero reverse recovery loss
- UVLO protection on VCC, internal bootstrap diode
- Interlocking function, dedicated pin for shutdown functionality
- Accurate internal timing match
- 3.3V to 15V compatible inputs with hysteresis and pull-down
- Overtemperature protection, bill of material reduction
- Very compact and simplified layout, flexible, easy, and fast design
- QFN package
- Industrial temperature range from -40°C to 125°C
- Output capacitance is 14.2pF (VGS = 0V, VDS = 400V)
技术规格
1放大器
半桥
31引脚
表面安装
-
4.75V
-40°C
-
-
No SVHC (25-Jun-2025)
-
GaN HEMT
QFN-EP
非反向
-
9.5V
125°C
-
-
法律与环境
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书
