MASTERGAN1LTR

MASTERGAN1LTR is a 600V half-bridge enhancement-mode GaN HEMT with high high-voltage driver. It is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in a half‑bridge configuration. It features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with analogue controllers, microcontrollers, and DSP units. The integrated power GaNs have RDS(ON) of 150mohm, 650V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. Typical applications are high frequency resonant converters including LLC, LCC and resonant flyback, active clamp flybacks, switch-mode power supplies, chargers and adapters, PFC, high-voltage DC-DC and DC-AC converters.

• Reverse current capability, zero reverse recovery loss
• UVLO protection on VCC, internal bootstrap diode
• Interlocking function, dedicated pin for shutdown functionality
• Accurate internal timing match
• 3.3V to 15V compatible inputs with hysteresis and pull-down
• Overtemperature protection, bill of material reduction
• Very compact and simplified layout, flexible, easy, and fast design
• QFN package
• Industrial temperature range from -40°C to 125°C
• Output capacitance is 20pF (VGS = 0V, VDS = 400V)