
需要更多?
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 1 | CNY10.450 | CNY10.45 |
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY10.450 (CNY11.8085) |
| 10+ | CNY6.880 (CNY7.7744) |
| 50+ | CNY6.490 (CNY7.3337) |
| 100+ | CNY6.100 (CNY6.893) |
| 250+ | CNY5.720 (CNY6.4636) |
| 500+ | CNY5.680 (CNY6.4184) |
| 1000+ | CNY5.640 (CNY6.3732) |
| 2500+ | CNY5.600 (CNY6.328) |
产品信息
产品概述
L6386ADTR is a high voltage high and low-side driver. It is manufactured with the BCD™ offline technology, and able to drive one high and one low-side power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600V. Both device outputs can independently sink and source 650mA and 400mA respectively and can be simultaneously driven for high half-bridge configurations. This driver is ideal for applications such as home appliances, induction heating, motor drivers, SR motors, DC, AC, PMDC and PMAC motors, asymmetrical half-bridge topologies, HVAC, lighting applications, factory automation, power supply system etc.
- dV/dt immunity to ±50V/nsec in full temperature range
- Switching times 50/30nsec, rise/fall with 1nF load
- CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
- Undervoltage lockout on lower and upper driving section
- Integrated bootstrap diode, case style is SO-14
- Outputs in phase with inputs
- Junction operating temperature range is -45°C to 125°C
- Driver current capability is 400mA source and 650mA for sink
技术规格
2放大器
高压侧和低压侧
14引脚
表面安装
400mA
-
-45°C
110ns
-
MSL 1 -无限制
-
IGBT, MOSFET
SOIC
反相
650mA
17V
125°C
110ns
-
No SVHC (25-Jun-2025)
法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书
