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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY13.080 (CNY14.7804) |
| 10+ | CNY8.750 (CNY9.8875) |
| 50+ | CNY8.110 (CNY9.1643) |
| 100+ | CNY7.470 (CNY8.4411) |
| 250+ | CNY7.450 (CNY8.4185) |
| 500+ | CNY7.430 (CNY8.3959) |
| 1000+ | CNY7.410 (CNY8.3733) |
| 2500+ | CNY7.380 (CNY8.3394) |
产品概述
The L6384ED is a High-voltage Gate Driver, manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOS or IGBT devices. This device has one input pin, one enable pin (DT/SD) and two output pins and guarantees matched delays between low-side and high-side sections, thus simplifying device's high frequency operation. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution.
- 600V High voltage rail
- dV/dt Immunity ±50V/nsec in full temperature range
- 400mA Source current
- 650mA Sink current
- Switching times 50/30ns rise/fall with 1nF load
- Shutdown input
- Dead time setting
- Under voltage lockout
- Integrated bootstrap diode
- Clamping on VCC
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
2放大器
半桥
8引脚
表面安装
400mA
11.5V
-45°C
200ns
-
MSL 3 - 168小时
-
IGBT, MOSFET
SOIC
反相
650mA
16.6V
125°C
200ns
-
No SVHC (25-Jun-2025)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
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