RFD16N06LESM9A

The RFD16N06LESM is a N-channel Power MOSFET manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits give optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3 to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

• Temperature compensating PSPICE® model
• Can be driven directly from CMOS, NMOS and TTL circuits
• Peak current vs. pulse width curve
• UIS Rating curve