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323 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY108.870 (CNY123.0231) |
| 5+ | CNY87.670 (CNY99.0671) |
| 10+ | CNY66.470 (CNY75.1111) |
| 50+ | CNY65.180 (CNY73.6534) |
| 100+ | CNY63.880 (CNY72.1844) |
| 250+ | CNY62.610 (CNY70.7493) |
包装规格:每个
最低: 1
多件: 1
CNY108.87 (CNY123.02 含税)
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- 制造商ONSEMI制造商产品编号NVH4L032N065M3S库存编号4583077产品范围EliteSiC Series技术数据表MOSFET模块配置单通道类型N通道电流, Id 连续50A漏源电压, Vds650V漏源接通状态电阻0.044ohm晶体管封装类型TO-247针脚数4引脚Rds(on)测试电压18V阈值栅源电压最大值4V功率耗散187W工作温度最高值175°C产品范围EliteSiC SeriesSVHC(高度关注物质)Lead (25-Jun-2025)
NVH4L032N065M3S is an EliteSiC 650V M3S MOSFET that uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. Typical applications include automotive on board charger and automotive DC−DC converter for EV/HEV.
- Drain to source voltage is 650V, maximum drain current is 50A
- Typical RDS(ON) = 32mohm at VGS = 18V
- Ultra low gate charge QG(tot) = 69nC
- High speed switching with low capacitance (Coss = 114pF)
- 100% avalanche tested
- AEC−Q101 qualified and PPAP capable
- Operating junction temperature range from -55 to +175°C
- MOSFET模块配置
单
电流, Id 连续50A
漏源接通状态电阻0.044ohm
针脚数4引脚
阈值栅源电压最大值4V
工作温度最高值175°C
SVHC(高度关注物质)Lead (25-Jun-2025)
通道类型N通道
漏源电压, Vds650V
晶体管封装类型TO-247
Rds(on)测试电压18V
功率耗散187W
产品范围EliteSiC Series
- 原产地:
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区税则号:85412900US ECCN:EAR99EU ECCN:NLRRoHS 合规:是RoHS
RoHS 邻苯二甲酸盐合规:是RoHS
SVHC:Lead (25-Jun-2025)下载产品合规证书产品合规证书
重量(千克):.008425
