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NTMTS1D6N10MCTXG
功率场效应管, MOSFET, N通道, 100 V, 273 A, 1420 µohm, DFNW, 表面安装
图片仅用于图解说明，详见产品说明。
可订购
制造商标准交货时间：39 周
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包装选项
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 1 | CNY59.240 | CNY59.24 |
切割卷带 & 复卷
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY59.240 (CNY66.9412) |
| 10+ | CNY44.630 (CNY50.4319) |
| 100+ | CNY44.100 (CNY49.833) |
| 500+ | CNY43.560 (CNY49.2228) |
| 1000+ | CNY40.820 (CNY46.1266) |
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
100V, 273A, 1.7mohm single N-channel power MOSFET, This N-channel PTNG 100V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance. Typical applications include motor control, DC-DC converters, battery management/protection, power tools, E-scooters, drones, battery packs/ energy storage units, telecom, netcom and power supplies.
- Very low RDS(on), shielded gate trench technology minimize conduction losses
- Low profile PQFN 8x8 package, small footprint (8x8 mm) for compact design
- Maximum junction temperature of 175°C
- Soft body diode with low Qrr, reduces switching spike
- High peak current and low parasitic inductance
- Offers a wider design margin for thermally challenged applications
- Low QG and capacitance to minimize driver losses
技术规格
通道类型
N通道
电流, Id 连续
273A
晶体管封装类型
DFNW
Rds(on)测试电压
10V
功率耗散
291W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
Lead (25-Jun-2025)
漏源电压, Vds
100V
漏源接通状态电阻
1420µohm
晶体管安装
表面安装
阈值栅源电压最大值
4V
针脚数
8引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (25-Jun-2025)
下载产品合规证书
产品合规证书
重量（千克）：.0001