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HUF75339P3
功率场效应管, MOSFET, N通道, 55 V, 75 A, 0.012 ohm, TO-220AB, 通孔
可订购
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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY22.000 (CNY24.860) |
| 10+ | CNY10.880 (CNY12.2944) |
| 100+ | CNY9.600 (CNY10.848) |
| 500+ | CNY8.560 (CNY9.6728) |
| 1000+ | CNY7.540 (CNY8.5202) |
| 5000+ | CNY7.390 (CNY8.3507) |
包装规格：每个
最低: 1
多件: 1
CNY22.00 (CNY24.86 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches and power management in portable and battery-operated products. This product is general usage and suitable for many different applications.
- Peak current vs. pulse width curve
- UIS Rated curve
技术规格
通道类型
N通道
电流, Id 连续
75A
晶体管封装类型
TO-220AB
Rds(on)测试电压
10V
功率耗散
200W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
Lead (25-Jun-2025)
漏源电压, Vds
55V
漏源接通状态电阻
0.012ohm
晶体管安装
通孔
阈值栅源电压最大值
4V
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (25-Jun-2025)
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产品合规证书
重量（千克）：.002041