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已停产
产品概述
The FQP7P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
- Improved system reliability in PFC and soft switching topologies
- Switching loss improvements
- Lower conduction loss
- 175°C maximum junction temperature rating
技术规格
通道类型
P通道
电流, Id 连续
7A
晶体管封装类型
TO-220
Rds(on)测试电压
10V
功率耗散
45W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
Lead (17-Jan-2022)
漏源电压, Vds
60V
漏源接通状态电阻
0.41ohm
晶体管安装
通孔
阈值栅源电压最大值
4V
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
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法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (17-Jan-2022)
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重量(千克):.002

