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FQP50N06L
功率场效应管, MOSFET, N通道, 60 V, 52.4 A, 0.017 ohm, TO-220, 通孔
已停产
产品概述
The FQP50N06L is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
- Improved system reliability in PFC and soft switching topologies
- Switching loss improvements
- Lower conduction loss
- 175°C maximum junction temperature rating
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
52.4A
晶体管封装类型
TO-220
Rds(on)测试电压
10V
功率耗散
121W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
Lead (17-Jan-2022)
漏源电压, Vds
60V
漏源接通状态电阻
0.017ohm
晶体管安装
通孔
阈值栅源电压最大值
2.5V
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (17-Jan-2022)
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重量（千克）：.002785