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FDP20N50
功率场效应管, MOSFET, N通道, 500 V, 20 A, 0.23 ohm, TO-220, 通孔
已停产
产品概述
The FDP20N50 is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 100% avalanche tested
- 45.6nC typical low gate charge
- 27pF typical low Crss
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
20A
晶体管封装类型
TO-220
Rds(on)测试电压
10V
功率耗散
250W
工作温度最高值
150°C
合规
-
漏源电压, Vds
500V
漏源接通状态电阻
0.23ohm
晶体管安装
通孔
阈值栅源电压最大值
5V
针脚数
3引脚
产品范围
-
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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