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FDMS86202ET120
功率场效应管, MOSFET, N通道, 120 V, 102 A, 7200 µohm, Power 56, 表面安装
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可订购
制造商标准交货时间：41 周
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包装选项
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 1 | CNY56.500 | CNY56.50 |
切割卷带 & 复卷
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY56.500 (CNY63.845) |
| 10+ | CNY38.150 (CNY43.1095) |
| 100+ | CNY27.720 (CNY31.3236) |
| 500+ | CNY26.430 (CNY29.8659) |
| 1000+ | CNY26.280 (CNY29.6964) |
品項附註
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产品概述
FDMS86202ET120 is a N-channel shielded gate PowerTrench® MOSFET. This N-channel MOSFET is produced using Fairchild Semiconductor’s Advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application includes DC-DC conversion.
- Shielded gate MOSFET Technology
- Advanced package and silicon combination for low rDS(on) and high efficiency
- 100% UIL tested
- 120V drain to source voltage (TA = 25°C), 102A continuous drain current (TC = 25°C)
- 3.1V maximum gate source threshold voltage (VGS=VDS, ID=250μA), 187W power dissipation (TC=25°C)
- 3275pF typical input capacitance (VDS = 60V, VGS = 0V, f = 1MHz, TJ = 25°C)
- 460pF typical output capacitance (VDS = 60V, VGS = 0V, f = 1MHz, TJ = 25°C)
- 8.75ns typical rise time (VDD = 60V, ID = 13.5A, VGS = 10V, RGEN = 6ohm)
- 14.3nC gate to source charge typical (ID = 13.5A, VDD = 60V, TJ = 25°C)
- 8 pin power 56 package, operating temperature range from -55 to +175°C
技术规格
通道类型
N通道
电流, Id 连续
102A
晶体管封装类型
Power 56
Rds(on)测试电压
10V
功率耗散
187W
工作温度最高值
175°C
合规
-
漏源电压, Vds
120V
漏源接通状态电阻
7200µohm
晶体管安装
表面安装
阈值栅源电压最大值
4V
针脚数
8引脚
产品范围
PowerTrench
SVHC(高度关注物质)
Lead (25-Jun-2025)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (25-Jun-2025)
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产品合规证书
重量（千克）：.0004