FDMD8560L

FDMD8560L is a dual N-channel PowerTrench® MOSFET. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Application includes „synchronous buck primary switch of half / full bridge converter for telecom, motor bridge primary switch of half / full bridge converter for BLDC motor, „MV POL 48V synchronous buck switch, and half/full bridge secondary synchronous rectification.

• Ideal for flexible layout in primary side of bridge topology
• 100% UIL tested, kelvin high side MOSFET drive Pin-out capability
• Static drain to source on resistance is 2.5mohm (typ, VGS = 10V, ID = 22A, Q1)
• Drain to source voltage is 60V (Q1, Q2, typ, TA = 25°C)
• Gate to source threshold voltage is 1.0V (typ, Q1, Q2, VGS = VDS, ID = 250µA)
• Power dissipation is 48W (typ, Q1, Q2, TC = 25°C)
• Rise time is 15ns (typ, Q1, Q2, VDD = 30V, ID = 22A, VGS = 10V, RGEN = 6ohm)
• Reverse recovery time is 53ns (Q1, Q2, IF = 22A, di/dt = 100A/μs, typ)
• Operating and storage junction temperature range from -55 to +150°C, power 5 x 6 package