FDG1024NZ.

The FDG1024NZ is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

• Very low level gate drive requirements allowing operation in 1.5V circuits (VGS (th) <lt/>1V)
• Very small package outline
• ±8V Gate to source voltage
• 1.2A Continuous drain current
• 6A Pulsed drain current